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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2908 DESCRIPTION With TO-3PN package Low collector saturation voltage APPLICATIONS For use in power amplifier and switching circuits applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg Collector-base voltage Collector-emitter voltage PARAMETER Open emitter Open base CHA IN Collector current Base current Emitter-base voltage E SEM NG TC=25ae Open collector OND IC CONDITIONS TOR UC VALUE 200 100 12 5.0 10 2.5 50 0.4 150 -55~150 UNIT V V V A A A W W/ae ae ae Collector current-peak Collector power dissipation Derate above 25ae Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2908 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=3.0A ;IB1=0.3A;L=1.0mH IC=3A ;IB=300mA IC=3A ;IB=300mA VCB=100V; IE=0 VCE=100V;VBE=-1.5V VEB=5V; IC=0 IC=0.3A ; VCE=5V IC=3A ; VCE=5V 60 40 MIN 100 1.0 1.5 10 10 10 320 |I |I |I TYP. MAX UNIT V V V A A A SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE-2 Switching times ton ts tf Fall time Turn-on time Storage time INC L E SEM ANG H K 160-320 IC=3A; VCC=30V IB1=0.3A ,IB2=-0.3A RL=10 OND IC TOR UC 0.5 |I 2.0 1.0 s |I |I s s hFE-1 Classifications M 60-120 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2908 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2908 CHA IN E SEM NG OND IC TOR UC 4 |
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